CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural electrical properties the investigated. For film thicknesses below 300 nm, 3C-SiC material deposited 2H-AlN/Si presented a better quality than directly Si(111) using well-established two-step carbonization–epitaxy process. good lattice match with AlN may open reliable route towards high-quality thin heteroepitaxial wafer. Nevertheless, was featured presence twinned domains small inclusions 6H-SiC. formation AlSiN at AlN/Si interface is also reported. This first time such layers are described within an heterostructure. Furthermore, noticeable modifications observed in film. First, growth process SiC induced reduction dislocation density AlN, attesting to healing thermal treatment, as already for other AlN-based heterostructures higher-temperature processes. dramatic insulating character which could be related cross-doping between materials.